IRL2505STRRPBF

HEXFET, 104A, 200W

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PartNumber:: IRL2505STRRPBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 09+

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Products Upload time: 2011-06-03

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Part Number:IRL2505STRRPBF
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Product Summary

The IRL2505STRRPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRL2505STRRPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 104A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 74 A; (3)IDM, Pulsed Drain Current: 360A; (4)PD @TA = 25℃, Power Dissipation: 3.8 W; (5)PD @TC = 25℃, Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS, Gate-to-Source Voltage: ±16 V; (8)EAS, Single Pulse Avalanche Energy: 500 mJ; (9)IAR, Avalanche Current: 54 A; (10)EAR, Repetitive Avalanche Energy: 20 mJ; (11)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (12)TJ, TSTG, Operating Junction and sstorage temperature range: -55 to + 175℃; (13)soldering temperature, for 10seconds: 300℃.

Features

IRL2505STRRPBF features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Surface Mount; (4)Low-profile through-hole; (5)175℃ Operating Temperature; (6)Fast Switching; (7)Fully Avalanche Rated.