Product Summary
The IRL2505STRRPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRL2505STRRPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 104A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 74 A; (3)IDM, Pulsed Drain Current: 360A; (4)PD @TA = 25℃, Power Dissipation: 3.8 W; (5)PD @TC = 25℃, Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS, Gate-to-Source Voltage: ±16 V; (8)EAS, Single Pulse Avalanche Energy: 500 mJ; (9)IAR, Avalanche Current: 54 A; (10)EAR, Repetitive Avalanche Energy: 20 mJ; (11)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (12)TJ, TSTG, Operating Junction and sstorage temperature range: -55 to + 175℃; (13)soldering temperature, for 10seconds: 300℃.
Features
IRL2505STRRPBF features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Surface Mount; (4)Low-profile through-hole; (5)175℃ Operating Temperature; (6)Fast Switching; (7)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRL2505STRRPBF |
MOSFET N-CH 55V 104A D2PAK |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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IRL2203N |
MOSFET N-CH 30V 116A TO-220AB |
Data Sheet |
Negotiable |
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IRL2203NL |
MOSFET N-CH 30V 116A TO-262 |
Data Sheet |
Negotiable |
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IRL2203NLPBF |
International Rectifier |
MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl |
Data Sheet |
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IRL2203NPBF |
International Rectifier |
MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB |
Data Sheet |
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IRL2203NS |
MOSFET N-CH 30V 116A D2PAK |
Data Sheet |
Negotiable |
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IRL2203NSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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