(Hong Kong)
Product Summary
The SPB17N80C3 is a power transistor. It is designed for Industrial application with high DC bulk voltage and switching application (active clamp forward topology).
Parametrics
SPB17N80C3 absolute maximum ratings: (1)continuous drain current, ID: 17A when Tc=25℃; 11A when Tc=100℃; (2)pulse drain current, ID, pulse: 51A when Tc=25℃; (3)avalanche energy, single pulse, EAS: 670mJ when ID=3.4A, VDD=50V; (4)avalanche current, repetitive, tAR, IAR: 17A; (5)MOSFET dv/dt ruggedness, dv/dt: 50V/ns when VDS=0 to 640V; (6)power dissipation, Ptot: 227W when Tc=25℃; (7)operating and storage temperature, Tj,Tstg: -55 to 150℃.
Features
SPB17N80C3 features: (1)new revolutionary high voltage technology; (2)Extreme dv/dt rated; (3)High peak current capability; (4)Qualified according to JEDE for target applications; (5)Pb-free lead plating; RoHS compliant; (6)Ultra low gate charge; (7)Ultra low effective capacitances.
Diagrams
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 SPB17N80C3 |
Infineon Technologies |
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Data Sheet |
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